Triple_Junction software
The Triple_Junction software calculates J(V) characteristics of a multi-junction device including two or three junctions. The device is modeled according to the drawing presented in Figure 1.
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Figure 1 : Model for a triple junction device. |
Each junction is modeled by a current density source JSCi in parallel with two diodes, D1i and D2i, and a shunt resistance RPi, the whole being in series with a series resistance RSi, where i is the index of the considered junction. Besides, it is possible to take into account leakage resistances, either toward the high voltage terminal, Rli, or toward the ground, Rgi. Calculations are performed solving the following equation for each junction
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where Jsdi is the saturation current density of each diode i and mi its ideality factor. T is the temperature, taken equal to 300 K, and kb the Boltzmann constant.
It is then possible to plot J(V) characteristics when one, two or three of the junctions are illuminated. Figure 2(a) presents the J(V) characteristics of each junction, as if it was isolated, of a triple junction device under AM1.5G. Figure 2(b) displays the J(V) characteristics of the complete device under AM1.5G.
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Figure 2.(a) J(V) characteristics of each junction taken separately from a triple junction under AM1.5G |
Figure 2.(b) J(V) characteristics of the whole device under AM1.5G |
Contact : christophe.longeaud@centralesupelec.fr